 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ADVANCED LINEAR DEVICES, INC. ALD1123E/ALD1121E QUAD/DUAL EPAD(R) PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY FEATURES BENEFITS * Electrically Programmable Analog Device * * * * * * * * * * * CMOS Technology Operates from 2V, 3V, 5V to 10V Flexible basic circuit building block and design element Very high resolution -- average e-trim voltage resolution of 0.1mV Wide dynamic range -- current levels from 0.1A to 3000A Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps Proven, non-volatile CMOS technology Typical 10 years drift of less than 2mV Usable in voltage mode or current mode High input impedance -- 1012 Very high DC current gain -- greater than 109 Device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68A Tight matching and tracking of on-resistance between different devices with e-trim Wide dynamic resistance matching range Very low input currents and leakage currents Low cost, monolithic technology Application-specific or in-system programming modes Optional user software-controlled automation Optional e-trim of any standard/custom configuration Micropower operation Available in standard PDIP, SOIC and hermetic CDIP packages Suitable for matched-pair balanced circuit configuration Suitable for both coarse and fine trimming as well as matched MOSFET array applications * Precision matched electrically after packaging * Simple, elegant single-chip user option * * * * * * * to trimming voltage/current values Excellent device matching characteristics with or without additional electrical trim Remotely and electrically trim parameters on circuits that are physically inaccessible Usable in environmentally sealed circuits No mechanical moving parts -- high G-shock tolerance Improved reliability, dependability, dust and moisture resistance Cost and labor savings Small footprint for high board density applications PIN CONFIGURATION ALD1123E PN1 GN1 DN1 V-1, SN1 PN4 GN4 DN4 V-2, SN4 1 2 3 4 5 6 7 8 M4 M3 M1 M2 * * * * * * * * * * * 16 15 14 13 12 11 10 9 SN2 DN2 GN2 PN2 SN3 DN3 GN3 PN3 ORDERING INFORMATION Operating Temperature Range* 0C to +70C 0C to +70C 16-Pin Plastic Dip Package ALD1123E PC 16-Pin SOIC Package ALD1123E SC DC, PC, SC PACKAGE PIN CONFIGURATION ALD1121E PN1 GN1 1 M1 2 3 M2 4 5 PN2 7 6 DN2 GN2 8 SN2 Operating Temperature Range* 0C to +70C 0C to +70C 8-Pin Plastic Dip Package ALD1121E PA * Contact factory for industrial temperature range DN1 SN1,V- 8-Pin SOIC Package ALD1121E SA DA, PA, SA PACKAGE (c) 2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com APPLICATIONS GENERAL DESCRIPTION ALD1123E/ALD1121E are monolithic quad/dual EPAD(R) (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1123E/ALD1121E are precision matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in electrical characteristics. The ALD1123E has four (4) separate source pins. SN1, SN2 share a common substrate pin V-1 which has to be connected to the most negative voltage potential. Likewise, SN3, SN4 share a common substrate pin V-2 which has to be connected to the negative voltage potential for SN3, SN4. The ALD1121E has two (2) separate source pins (SN1, SN2). Both SN1, SN2 share a common substrate pin 4 which has to be connected to the most negative voltage potential. Using an ALD1123E/ALD1121E MOSFET array is simple and straight forward. The MOSFETs function in electrical characteristics as n-channel MOSFETs except that all the devices have exceptional matching to each other. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an on-resistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. Since these devices are on the same monolithic chip, they also exhibit excellent tempco matching characteristics. These MOSFET devices have very low input currents, and as a result a very high input impedance (>10 12 Ohm). The gate voltage from a control source can drive many MOSFET inputs with practically no loading effects. Used in precision current mirror or current multiplier applications, they can be used to provide a current source over a 100 nA to 3 mA range, and with either a positive, negative or zero tempco. Optional EPAD Threshold Voltage Trimming By User * Precision PC-based electronic calibration * Automated voltage trimming or setting * Remote voltage or current adjustment of inaccessible nodes * PCMCIA based instrumentation trimming * Electrically adjusted resistive load * Temperature compensated current sources and current mirrors * Electrically trimmed/calibrated current sources * Permanent precision preset voltage level shifter * Low temperature coefficient voltage and/or current bias circuits * Multiple preset voltage bias circuits * Multiple channel resistor pull-up or pull-down * * * * * * * * circuits Microprocessor based process control systems Portable data acquisition systems Battery operated terminals and instruments Remote telemetry systems E-trim gain amplifiers Low level signal conditioning Sensor and transducer bias currents Neural networks BLOCK DIAGRAM ALD1121E PN1 (1) DN1 (3) DN2 (7) PN2 (5) GN1(2) GN2 (6) The basic EPAD MOSFET device is a monotonically adjustable device which means the device can normally be e-trimmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. Used as an in-circuit element for trimming or setting a combination of voltage and/or current characteristics, it can be e-trimmed remotely and automatically. Once e-trimmed, the set voltage and current levels are stored indefinitely inside the device as a nonvolatile stored charge, which is not affected during normal operation of the device, even when power is turned off. A given EPAD device can be adjusted many times to continually increase its threshold voltage. A pair of EPAD devices can also be connected differentially such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. The ALD1123E/ALD1121E can be e-trimmed with the ALD EPAD programmer to obtain the desired voltage and current levels. Or they can be e-trimmed as an active in-system element in a user system, via user designed interface circuitry. PN1, PN2, etc., are pins required for optional e-trim of respective MOSFET devices. If unused, these pins are to be connected to V- or ground. For more information, see Application Note AN1108. ALD1123E M1 SN1(4) V- (4) BLOCK DIAGRAM PN1 (1) GN1(2) SN1 (4) V-1 (4) SN2 (16) SN3 (12) ALD1123E/ALD1121E Advanced Linear Devices ~ ~ M1 ~ M2 SN2 (8) DN1 (3) DN2 (15) PN2 (13) PN3 (9) DN3 (11) DN4 (7) PN4 (5) GN2 (14) GN3(10) GN4 (6) M2 M3 M4 V-2 (8) SN4 (8) 2 ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range Power dissipation Operating temperature range PA, SA, PC, SC package DA, DC package Storage temperature range Lead temperature, 10 seconds -0.3V to +13.2V 6.6V 0.3V to V+ +0.3V 600 mW 0C to +70C -55C to +125C -65C to +150C +260C OPERATING ELECTRICAL CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified Parameter Drain to Source Voltage 1 Initial Threshold Voltage 2 E-trim Vt Range Drain - Gate Connected Voltage Tempco Symbol VDS Vt i Vt TCVDS 0.990 1.000 -1.6 -0.3 0.0 +2.7 Initial Offset Voltage 3 VOS i 1 5 1.000 ALD1123E Min Typ Max 10.0 1.010 3.000 0.990 1.000 -1.6 -0.3 0.0 +2.7 1 5 1.000 Min ALD1121E Typ Max 10.0 1.010 3.000 Unit V V V mV/C mV/C mV/C mV/C mV ID = 5A ID = 50A ID = 68A ID = 500A IDS = 1A T A = 21C Test Conditions Tempco of VOS Differential Threshold Voltage Tempco of Differential Threshold Voltage 4 Long Term Drift Long Term Drift Match Drain Source On Current 4 TCVOS DV t 5 2.000 5 2.000 V/C V VDS1 = VDS2 TCDV t V t /t V t /t IDS(ON) 0.033 -0.02 -5 3.0 -0.05 0.033 -0.02 -5 3.0 -0.05 mV/C mV V mA 1000 Hours 1000 Hours VG =VD = 5V VS = 0V Vt = 1.0 Drain Source On Current 4 IDS(ON) 0.8 0.8 mA VG =VD = 5V V S = 0V Vt = 3.0 V t = 1.000V Initial Zero Tempco Voltage 3 Zero Tempco Current Initial On-Resistance 3 On-Resistance Match VZTCi IZTC RON i RON 1.52 68 500 0.5 1.52 68 500 0.5 V A % VGS = 5V VDS = 0.1V NOTES: 1. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at any voltage between V- and V+. 2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage value. 3. Initial and Final values are the same unless deliberately changed by user. 4. These parameters apply only when Vt of one or more of the devices are to be changed by user. ALD1123E/ALD1121E Advanced Linear Devices 3 OPERATING ELECTRICAL CHARACTERISTICS (cont'd) TA = 25C V+ = +5.0V unless otherwise specified Parameter Transconductance Transconductance Match Low Level Output Conductance High Level Output Conductance Drain Off Leakage Current Symbol gm gm ALD1123E Min Typ 1.4 25 Max Min ALD1121E Typ 1.4 25 Max Unit mA/V A/V Test Conditions VD = 10V,VG =Vt + 4.0 VD = 10V,VG =Vt + 4.0 gOL 6 6 A/V VG = Vt +0.5V gOH ID(OFF) 68 5 400 4 100 1 68 5 400 4 100 1 A/V pA nA pA nA pF dB Hours % VG = Vt +4.0V TA = 125C Gate Leakage Current IGSS 10 10 TA = 125C Input Capacitance Cross Talk Relaxation Time Constant Relaxation Voltage 4 4 CISS 25 60 25 60 2 -0.3 f = 100KHz tRLX VRLX 2 -0.3 1.0V Vt 3.0V E-TRIM CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified Parameter E-trim Vt Range Resolution of V t E-trim Pulse Step 4 Change in Vt Per E-trim Pulse 4 RV t V t / N 0.1 0.5 0.05 1 0.1 0.5 0.05 1 mV mV/ pulse Vt = 1.0V V t = 2.5V 4 Symbol Vt Min 1.000 ALD1123E Typ Max 3.000 Min ALD1121E Typ Max 3.000 Unit V Test Conditions 1.000 E-trim Pulse Voltage 4 E-trim Pulse Current 4 Pulse Frequency 4 Vp Ip pulse 11.75 12.00 2 50 12.25 11.75 12.00 2 50 12.25 V mA KHZ ALD1123E/ALD1121E Advanced Linear Devices 4 TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS 20 OUTPUT CHARACTERISTICS +1.0 DRAIN SOURCE ON CURRENT (mA) TA = +25C 15 DRAIN SOURCE ON CURRENT (mA) VGS = +12V VGS = +10V VGS = + 8V VGS = + 6V TA = +25C VGS = +12V VGS = +10V 10 0 VGS = +6V VGS = +8V 5 VGS = + 4V VGS = + 2V 0 0 2 4 6 8 10 12 -1.0 -200 -160 -120 -80 -40 0 40 80 120 160 +200 DRAIN SOURCE ON VOLTAGE (V) DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE ON CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE ON CURRENT (mA) 6 3.0 VG = 5V 5 4 3 2 1 Vt = 3.0V 0 -50 -25 0 25 50 75 100 125 Vt = 1.0V Vt = 1.5V Vt = 2.0V Vt = 2.5V DRAIN SOURCE ON CURRENT vs. THRESHOLD VOLTAGE VGS = +5V 2.0 VGS = +4V TA = +25C VDS = +5.0V DRAIN SOURCE ON CURRENT (mA) 1.0 VGS = +3V VGS = +2V 0 0 VGS = +1V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 AMBIENT TEMPERATURE (C) THRESHOLD VOLTAGE (V) TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE 2.0 TA = +25C HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE 75 HIGH LEVEL OUTPUT CONDUCTANCE (A/V) TRANSCONDUCTANCE ( mA/V) TA = +25C 70 1.5 1.0 60 5.0 VGS = Vt + 4.0V VDS = 10V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS = Vt + 4.0V VDS = 5.0V 50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOLTAGE (V) THRESHOLD VOLTAGE (V) ALD1123E/ALD1121E Advanced Linear Devices 5 TYPICAL PERFORMANCE CHARACTERISTICS THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE 4.0 VDS = VGS ID = 1.0A Vt = 3.0V Vt = 2.5V 2.0 Vt = 2.0V Vt = 1.5V 1.0 Vt = 1.0V LOW LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE 12 VGS = Vt + 0.5V VDS = 5.0V THRESHOLD VOTAGE (V) 3.0 LOW LEVEL OUTPUT CONDUCTANCE(A/V) 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) DRAIN OFF LEAKAGE CURRENT (pA) TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE 2.5 TRANSCONDUCTANCE (mA/V) DRAIN OFF LEAKAGE CURRENT IDS vs. AMBIENT TEMPERATURE 600 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 IDS 2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE LOW LEVEL CURRENT OUTPUT CONDUCTANCE (A/V) 100 10 LOW LEVEL OUTPUT CONDUCTANCE vs. THRESHOLD VOLTAGE TA = +25C HIGH LEVEL OUTPUT CONDUCTANCE (mA/V) 90 80 70 60 50 40 -50 -25 0 25 50 VGS = Vt + 4.0V VDS = 5.0V 5 VGS = Vt + 0.5V VDS = 5.0V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 75 100 125 AMBIENT TEMPERATURE (C) THRESHOLD VOTAGE (V) ALD1123E/ALD1121E Advanced Linear Devices 6 TYPICAL PERFORMANCE CHARACTERISTICS DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE ON CURRENT (mA) DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 DRAIN SOURCE ON CURRENT ( A) Zero Temperature Coefficient (ZTC) 125C 5 4 3 0C 2 -55C -25C ZTC 125C ZTC 125C 50 Vt = 1.0V { - 25C Vt = 1.2V - 25C { Vt = 1.4V - 25C { 1 0 0 1 2 3 70C 4 125C 0 5 1.0 1.2 1.4 1.6 1.8 2.0 GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) CHANGE IN DIFFERENTIAL THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE DRAIN SOURCE ON CURRENT, BIAS CURRENT (A) CHANGE IN DIFFERENTIAL THRESHOLDVOLTAGE (mV) +10 +8 +6 +4 +2 0 -2 -4 -6 -8 -10 -50 -25 0 10000 REPRESENTATIVE UNITS DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. ON - RESISTANCE VDS = RON * IDS(ON) VGS = +0.9V to +5.0V VDS = 5.0V D VDS IDS(ON) S VDS = 0.5V 1000 100 10 1.0 VGS 0.1 25 50 75 100 125 0.1 1.0 10 100 1000 10000 AMBIENT TEMPERATURE (C) ON - RESISTANCE (K) GATE SOURCE VOLTAGE vs. DRAIN SOURCE ON CURRENT 5 DRAIN SOURCE ON CURRENT vs. OUTPUT VOLTAGE 5 DRAIN SOURCE ON CURRENT (mA) GATE SOURCE VOLTAGE (V) D VDS IDS(ON) 4 3 2 1 0 0.1 VGS S VDS = 0.5V TA = +125C 4 3 Vt = 1.000V VDS = VGS TA = -55C VDS = 0.5V TA = +25C TA = 0C 2 TA = +50C 1 0 0 1 2 3 TA = +125C 4 5 VDS = 5V TA = +25C VDS = 5V VDS = RON * IDS(ON) TA = +125C 1 10 100 1000 10000 DRAIN SOURCE ON CURRENT (A) OUTPUT VOLTAGE (V) ALD1123E/ALD1121E Advanced Linear Devices 7 TYPICAL PERFORMANCE CHARACTERISTICS OFFSET VOLTAGE vs. AMBIENT TEMPERATURE 3 REPRESENTATIVE UNITS GATE LEAKAGE CURRENT (pA) GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE 600 500 400 300 200 100 0 IGSS 4 OFFSET VOLTAGE (mV) 2 1 0 -1 -2 -3 -4 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) GATE SOURCE VOLTAGE vs. ON - RESISTANCE GATE SOURCE VOLTAGE (V) D 4.0 +125C VGS 3.0 +25C 2.0 VDS IDS(ON) DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/ C ) 5 -55C TA +125C 2.5 5.0 S 0.0V VDS 5.0V 0 -2.5 1.0 0.1 1 10 100 1000 10000 -5 1 10 100 1000 ON - RESISTANCE (K) DRAIN SOURCE ON CURRENT (A) ALD1123E/ALD1121E Advanced Linear Devices 8 |
Price & Availability of ALD1123ESC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |